Description
HMS135N85K, HMS135N85G N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency
switching performance.
Features
* VDS =85V,ID =135A
RDS(ON)=3.3mΩ , typical @ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating
100% UIS TESTED! 100% ∆Vds TESTED!
TO-252
DFN5X6-8L
D DDD
D DDD
top view
S SSG
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