HMS150N04KA Datasheet - H&M Semiconductor

HMS150N04KA - N-Channel Super Trench Power MOSFET

The HMS150N04KA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switchin

HMS150N04KA Features

* VDS =40V,ID =150A RDS(ON) = 2.7mΩ @(Typ) VGS=10V (Typ:3.5mΩ) RDS(ON) = 3.6mΩ @ (Typ)VGS=4.5V (Typ:4.0mΩ)

* Excellent gate charge x RDS(on) product

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Application

* DC/D

Datasheet Details

HMS150N04KA

H&M Semiconductor

772.89 KB

N-channel super trench power mosfet.

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