HMS180N06A N-Channel Super Trench Power MOSFET

H&M Semiconductor

Description

HMS180N06A N-Channel Super Trench Power MOSFET .
The HMS180N06A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Specifications

Part number: HMS180N06A
Manufacturer: H&M Semiconductor
File Size: 623.94 KB
Datasheet: HMS180N06A-HMSemiconductor.pdf
Description: N-Channel Super Trench Power MOSFET

Features

* VDS =60V,ID =120A RDS(ON) = 2.1mΩ (Typ) @ VGS=10V (Typ:3.5mΩ) RDS(ON) = 3.6mΩ (Typ) @ VGS=4.5V (Typ:4.0mΩ)
* Excellent gate charge x RDS(on) product
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating
* 100% UIS tested Schematic diagram H

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HMS180N06A N-Channel Super Trench Power MOSFET H&M Semiconductor

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