Datasheet4U Logo Datasheet4U.com

HMS18N10D N-Channel Enhancement Mode Power MOSFET

📥 Download Datasheet  Datasheet Preview Page 1

Description

HMS18N10D N-Channel Enhancement Mode Power MOSFET .
The HMS18N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

📥 Download Datasheet

Preview of HMS18N10D PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Specifications

Part number
HMS18N10D
Manufacturer
H&M Semiconductor
File Size
819.54 KB
Datasheet
HMS18N10D-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

Features

* VDS =100V,ID =18A RDS(ON) < 23mΩ @ VGS=10V (Typ:75mΩ) RDS(ON) < 33mΩ @ VGS=4.5V (Typ:80mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipat

HMS18N10D Distributors

📁 Related Datasheet

📌 All Tags

H&M Semiconductor HMS18N10D-like datasheet