Part number:
HMS18N10Q
Manufacturer:
H&M Semiconductor
File Size:
688.34 KB
Description:
N-channel enhancement mode power mosfet.
Datasheet Details
HMS18N10Q Features
* VDS =100V,ID =18A RDS(ON) < mΩ @ VGS=10V (Typ:75mΩ) RDS(ON) < mΩ @ VGS=4.5V (Typ:80mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipat
Datasheet Details
HMS18N10Q
H&M Semiconductor
688.34 KB
N-channel enhancement mode power mosfet.
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