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HMS18N10Q N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Description

HMS18N10Q N-Channel Enhancement Mode Power MOSFET .
The HMS18N10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HMS18N10Q
Manufacturer: H&M Semiconductor
File Size: 688.34 KB
Datasheet: HMS18N10Q-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =100V,ID =18A RDS(ON) < mΩ @ VGS=10V (Typ:75mΩ) RDS(ON) < mΩ @ VGS=4.5V (Typ:80mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipat

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HMS18N10Q N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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