HMS21N65F Features
* New technology for high voltage device
* Low on-resistance and low conduction losses
* Small package
* Ultra Low Gate Charge cause lower driving requirements
* 100% Avalanche Tested
* ROHS compliant VDS 650 V RDS(ON) MAX 180 mΩ ID 21 A Application
* Power factor cor
Datasheet Details
HMS21N65F, HMS21N65
H&M Semiconductor
745.56 KB
N-channel super junction power mosfet.
This datasheet PDF includes multiple part numbers: HMS21N65F, HMS21N65.
Please refer to the document for exact specifications by model.
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