Datasheet Details
- Part number
- HMS200N15
- Manufacturer
- H&M Semiconductor
- File Size
- 811.84 KB
- Datasheet
- HMS200N15-HMSemiconductor.pdf
- Description
- N-Channel Super Trench II Power MOSFET
HMS200N15 Description
HMS200N15, HMS200N15D N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency
switching performance.
HMS200N15 Features
* VDS =150V,ID =200A
RDS(ON)=4.0mΩ , typical (TO-220)@ VGS=10V
RDS(ON)=4.0mΩ , typical (TO-263)@ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating
100% UIS TESTED! 100% ∆Vds TESTED!
TO-22
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