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HMS200N03D - N-Channel Super Trench Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HMS200N03D
Manufacturer	H&M Semiconductor
File Size	459.15 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS200N03D-HMSemiconductor.pdf

HMS200N03D Product details

Description

The HMS200N03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Features

VDS =30V,ID =200A RDS(ON)=1.0mΩ (typical) @ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

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Published: Jul 1, 2025 |