HMS200N03D Datasheet - H&M Semiconductor

HMS200N03D - N-Channel Super Trench Power MOSFET

The HMS200N03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching

HMS200N03D Features

* VDS =30V,ID =200A RDS(ON)=1.0mΩ (typical) @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Application

* DC/DC Converter

* Ideal for high-frequency switc

Datasheet Details

HMS200N03D

H&M Semiconductor

459.15 KB

N-channel super trench power mosfet.

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