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HMS200N15D, HMS200N15 - N-Channel Super Trench II Power MOSFET

HMS200N15D Description

HMS200N15, HMS200N15D N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

HMS200N15D Features

* VDS =150V,ID =200A RDS(ON)=4.0mΩ , typical (TO-220)@ VGS=10V RDS(ON)=4.0mΩ , typical (TO-263)@ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-22

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HMS200N15D, HMS200N15. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HMS200N15D, HMS200N15
Manufacturer
H&M Semiconductor
File Size
811.84 KB
Datasheet
HMS200N15-HMSemiconductor.pdf
Description
N-Channel Super Trench II Power MOSFET
Note
This datasheet PDF includes multiple part numbers: HMS200N15D, HMS200N15.
Please refer to the document for exact specifications by model.

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N-Channel Super Trench Power MOSFET H&M Semiconductor
H&M Semiconductor HMS200N15D-like datasheet

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