HMS330N06 Datasheet - H&M Semiconductor

HMS330N06 N-Channel Super Trench II Power MOSFET

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

HMS330N06 Features

* VDS =V,ID =330A RDS(ON)=1.4mΩ , typical (TO-220)@ VGS=10V RDS(ON)=1.4mΩ , typical (TO-263)@ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220

HMS330N06-HMSemiconductor.pdf