HMSF30N90T Datasheet - H&M Semiconductor

HMSF30N90T 900V N-Channel Super Junction MOSFET

HMSF30N90T Features

* Very Low FOM (RDS(on) X Qg)

* Extremely low switching loss

* Excellent stability and uniformity

* 100% Avalanche Tested

* Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 950 30 0.16 88 Unit V A Ω nC Application

Datasheet Details

HMSF30N90T

H&M Semiconductor

369.02 KB

900v n-channel super junction mosfet.

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