HM17N10K Datasheet, Mosfet, H&M semi

HM17N10K Features

• Mosfet
• VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
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HM17N10K

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H&M semi

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📄 Datasheet

Description:

N-channel power mosfet. The +01. uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

HM17N10K Application

• Applications General Features
• VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ)
• High density cell design for ultra low Rds

TAGS

HM17N10K

H&M semi

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