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HM17N10K Datasheet - H&M semi

HM17N10K, N-Channel Power MOSFET

VDS =100V, ID =17A RDS(ON) 70mΩ @ VGS=10V (Typ:56mΩ), High density cell design for ultra low Rdson, Fully characterized avalanche vol...

HM17N10K-HMsemi.pdf

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Datasheet Details

Part number:

HM17N10K

Manufacturer:

H&M semi

File Size:

508.30 KB

Description:

N-channel power mosfet.

HM17N10K Description

Features

* VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ)

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation

* Special process technology

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