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HM3416B - N-Channel Enhancement Mode Power MOSFET

HM3416B Description

HM3416B N-Channel Enhancement Mode Power MOSFET .
The HM3416B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

HM3416B Features

* VDS = 20V,ID =6A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
HM3416B
Manufacturer
H&M Semiconductor
File Size
593.76 KB
Datasheet
HM3416B-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
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