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HM4611Q - N And P-Channel Enhancement Mode MOSFET

HM4611Q Description

HM4611Q N And P-Channel Enhancement Mode MOSFET .
Schematic diagram The HM4611Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

HM4611Q Features

* N-channel： VDS =60V,ID =10A RDS(ON)=34mΩ (typical) @ VGS=10V RDS(ON)=46mΩ (typical) @ VGS=4.5V P-Channel： VDS =-60V,ID =-10A RDS(ON)=85mΩ (typical) @ VGS=-10V RDS(ON)=135mΩ (typical) @ VGS=-4.5V
* Excellent gate charge x RDS(ON) product(FOM)
* Very low on-resistance RDS(ON)
* 15

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Datasheet Details

Part number
HM4611Q
Manufacturer
H&M Semiconductor
File Size
846.65 KB
Datasheet
HM4611Q-HMSemiconductor.pdf
Description
N And P-Channel Enhancement Mode MOSFET

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And P-Channel Enhancement Mode MOSFET H&M Semiconductor
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