HM85P02 - P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Datasheet Details

The HM85P02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge..

VDS =-20V,ID =-85A RDS(ON) < 7mΩ @ VGS=-4.5V RDS(ON) < 9mΩ @ VGS=-2.5V RDS(ON) < 12mΩ @ VGS=-1.8V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Schematic diagram Marking and pin Assignment Application.
Load switch.
Battery protection Package Marking and Ordering Information TO-220 top view Device Marking HM85P02 Devi.

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