HMM65N120T - Silicon Carbide Power MOSFET

H&M Semiconductor

Datasheet Details

Part number	HMM65N120T
Manufacturer	H&M Semiconductor
File Size	874.52 KB
Description	Silicon Carbide Power MOSFET
Datasheet	HMM65N120T-HMSemiconductor.pdf

3rd generation SiC MOSFET technology.
High blocking voltage with low on-resistance.
High-speed switching with low capacitances.
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits.
Reduce switching losses and minimize gate ringing.
Higher system efficiency.
Reduce cooling requirements.
Increase power density.
Increase system switching frequency.

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Published: Jun 30, 2025 |