Datasheet Details
- Part number
- HMS125N10D
- Manufacturer
- H&M Semiconductor
- File Size
- 518.23 KB
- Datasheet
- HMS125N10D-HMSemiconductor.pdf
- Description
- N-Channel Super Trench II Power MOSFET
HMS125N10D Description
HMS125N10D N-Channel Super Trench II Power MOSFET .
The HMS125N10D uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.
HMS125N10D Features
* VDS =100V,ID =125A RDS(ON)=3.8mΩ (typical) @ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating
100% UIS TESTED! 100% ∆Vds TESTED!
DFN 5X6
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