Datasheet Details
- Part number
- HMS180N06A
- Manufacturer
- H&M Semiconductor
- File Size
- 623.94 KB
- Datasheet
- HMS180N06A-HMSemiconductor.pdf
- Description
- N-Channel Super Trench Power MOSFET
HMS180N06A Description
HMS180N06A N-Channel Super Trench Power MOSFET .
The HMS180N06A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
HMS180N06A Features
* VDS =60V,ID =120A RDS(ON) = 2.1mΩ (Typ) @ VGS=10V (Typ:3.5mΩ) RDS(ON) = 3.6mΩ (Typ) @ VGS=4.5V (Typ:4.0mΩ)
* Excellent gate charge x RDS(on) product
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating
* 100% UIS tested
Schematic diagram
H
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