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HMS18N10D - N-Channel Enhancement Mode Power MOSFET

HMS18N10D Product details

Description

The HMS18N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge..

Features

  • VDS =100V,ID =18A RDS(ON) < 23mΩ @ VGS=10V (Typ:75mΩ) RDS(ON) < 33mΩ @ VGS=4.5V (Typ:80mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Application.
  • Power switching application.
  • Hard switched and high frequency circuits Schematic diagram Marking and pin assignment.

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Datasheet Details

Part number
HMS18N10D
Manufacturer
H&M Semiconductor
File Size
819.54 KB
Datasheet
HMS18N10D-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
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