Datasheet Details
- Part number
- HMS18N10Q
- Manufacturer
- H&M Semiconductor
- File Size
- 688.34 KB
- Datasheet
- HMS18N10Q-HMSemiconductor.pdf
- Description
- N-Channel Enhancement Mode Power MOSFET
HMS18N10Q Description
HMS18N10Q N-Channel Enhancement Mode Power MOSFET .
The HMS18N10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
HMS18N10Q Features
* VDS =100V,ID =18A RDS(ON) < mΩ @ VGS=10V (Typ:75mΩ) RDS(ON) < mΩ @ VGS=4.5V (Typ:80mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipat
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