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HMS50N10A - N-Channel Super Trench Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number: HMS50N10A
Manufacturer: H&M Semiconductor
File Size: 917.27 KB
Datasheet: HMS50N10A-HMSemiconductor.pdf
Description: N-Channel Super Trench Power MOSFET

HMS50N10A Product details

Description

The HMS50N10A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance..

Features

VDS =100V,ID =50A RDS(ON) =13.5mΩ(Typ) @ VGS=10V RDS(ON) =18.5mΩ(Typ) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating.
100% UIS tested Application.
DC/DC Converter.
Ideal for high-frequency switching and synchronous rectification Schematic diagram HMS50N10A Marking and pin assignment 100% UIS.

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N-Channel Super Trench Power MOSFET H&M Semiconductor

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