Datasheet4U Logo Datasheet4U.com

SI2302 - N-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Features

  • 　.
  • 20V, 3.5A, RDS(ON)=60mΩ @VGS=4.5V 　.
  • High dense cell design for extremely low RDS(ON) 　.
  • Rugged and reliable 　.
  • Lead free product is acquired 　.
  • SOT-23 Package 　.
  • Marking Code: A2 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0 Internal Block Diagram D HNM2302（SOT-23） D HNM2302 N-Channel MOSFETs HNM2302 N-Channel Enhancement Mode Field Effect Transistor 2302 SI2302 AO2302 GM2302 （） G S S SOT-23 G SOT-23 　.

📥 Download Datasheet

Datasheet preview – SI2302

Datasheet Details

Part number SI2302
Manufacturer HAOHAI
File Size 267.35 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SI2302 Datasheet
Additional preview pages of the SI2302 datasheet.

📁 Similar Datasheet

  • SI2302 - N-Channel MOSFET (VBsemi)
  • SI2302 - N-channel MOSFET (MCC)
  • SI2302 - 20V N-Channel MOSFET (JinYu)
  • SI2302 - 20V N-Channel MOSFET (VTR)
  • SI2302 - N-channel MOSFET (YANGJING)
  • SI2302A - N-Channel MOSFET (MCC)
  • SI2302A - 20V N-ChanneI MOSFET (UMW)
  • SI2302ADS - N-Channel MOSFET (Vishay Siliconix)
  • Si2302CDS - N-Channel MOSFET (Vishay)
  • Si2302DDS - N-Channel MOSFET (Vishay)
Other Datasheets by HAOHAI
  • SI2305 - P-Channel MOSFET
  • Si2623 - P-Channel Enhancement-Mode MOSFETs SMD

Full PDF Text Transcription

Click to expand full text
3.5A, 20V N 　N MOS 　N-Channel Enhancement Mode Field Effect Transistor 　　Features 　■20V, 3.5A, RDS(ON)=60mΩ @VGS=4.5V 　■High dense cell design for extremely low RDS(ON) 　■Rugged and reliable 　■Lead free product is acquired 　■SOT-23 Package 　■Marking Code: A2 　　Case Material: Molded Plastic.
Published: |