2SC2783
HGSemi
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Silicon npn power transistor.
HG Semiconductors
2sc2783HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR
Note : Above parameters , ratings , limits and conditio.
📁 Related Datasheet
2SC2780 - NPN SILICON EPITAXIAL TRANSISTOR
(NEC)
.
2SC2780 - Transistor
(TY Semiconductor)
Product specification
2SC2780
SOT-89
4.50±0.1 1.80±0.1
Unit:mm
1.50 ±0.1
■ Features
● High Collector-emitter voltage. ● Complements to PNP type 2SA.
2SC2782 - Silicon NPN Transistor
(Toshiba Semiconductor)
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2782
2SC2782
VHF BAND POWER AMPLIFIER APPLICATIONS
Output Power
: Po = 80W (Min.) (f = 175.
2SC2782 - NPN SILICON RF POWER TRANSISTOR
(ASI)
2SC2782
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power am.
2SC2782 - Silicon NPN POWER TRANSISTOR
(HGSemi)
HG Semiconductors
2sc2782HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR
2SC2782
VHF BAND POWER AMPLIFIER APPLICATIONS
Output P.
2SC2782A - Silicon NPN epitaxial planar type Transistor
(Toshiba Semiconductor)
2SC2782A
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
..
2SC2782A
Unit in mm : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi .
2SC2783 - TRANSISTOR
(Toshiba Semiconductor)
.
2SC2784 - NPN SILICON TRANSISTOR
(NEC)
.
