2SC2101
HGSemi
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Silicon npn power transistor.
H G Semiconductors
HG RF POWER TRANSISTOR
2SC2101
ROHS Compliance,Silicon NPN POWER TRANSISTOR
Note : Above parameters , ratings , limits and condit.
📁 Related Datasheet
2SC2101 - Silicon NPN POWER TRANSISTOR
(Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P =6W (Min.)
( f=175MHz, VCC=12.5V, Pi=0.5W )
Un.
2SC2102 - SILICON NPN TRANSISTOR
(Toshiba)
1
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : . Output Power : Po=15W (Min.)
( f=l 75MHz, Vcc=12.5V, Pi=1.3W).
2SC2103A - SILICON NPN TRANSISTOR
(Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : . Output Power : P =27W (Min.)
(f=175MHz, VC C=12.5V, Pi=4.2W ) 1.
2SC2104 - Silicon NPN Transistor
(Toshiba)
:
SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P G =3W(Min.)
(f=470MHz, V C c=12.6V, Pi=0.4W) ..
2SC2105 - SILICON NPN TRANSISTOR
(Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P =6W(Min.)
(f =4 70MHz, V C c=12.6V, P 1 =1W) . 1.
2SC2106 - Silicon NPN Transistor
(Toshiba)
:
SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P =12W(Min.)
(f=470MHz, VCC=12.6V, Pi=3W) . 100%.
2SC2117 - SILICON NPN TRANSISTOR
(Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : . Output Power : Po=2.8W (Min.)
( f=175MHz, VCC=13.5V, Pi=0.15W ).
2SC2118 - Silicon NPN Transistor
(Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : . Output Power : P =5W (Min.)
( f=175MHz, Vcc=13.5V, Pi=0.6W ) 10.
