Datasheet4U Logo Datasheet4U.com

2SC2106 - Silicon NPN Transistor

2SC2106 Description

: SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS..

2SC2106 Features

* . Output Power : P =12W(Min. ) (f=470MHz, VCC=12.6V, Pi=3W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ vC c=15V, Pi= 3W, f=470MHz Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Curr

📥 Download Datasheet

Preview of 2SC2106 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • 2SC2120 - TRANSISTOR (Toshiba Semiconductor)
  • 2SC2122 - NPN Transistor (INCHANGE)
  • 2SC2123 - NPN Transistor (INCHANGE)
  • 2SC2130 - NPN Transistor (JIANGSU CHANGJIANG)
  • 2SC2131 - NPN Transistor (Mitsubishi Electric Semiconductor)
  • 2SC2133 - NPN Transistor (Mitsubishi Electric Semiconductor)
  • 2SC2134 - NPN Epitaxial Silicon Transistor (Mitsubishi Electric Semiconductor)
  • 2SC2137 - NPN Transistor (INCHANGE)

📌 All Tags

Silicon NPN Transistor Toshiba
Toshiba 2SC2106-like datasheet