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2SC2137 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device p.

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Datasheet Specifications

Part number
2SC2137
Manufacturer
INCHANGE
File Size
200.73 KB
Datasheet
2SC2137-INCHANGE.pdf
Description
NPN Transistor

Applications

* Switching regulator and high voltage switching applications.
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collec

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