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2SC2117 - SILICON NPN TRANSISTOR

2SC2117 Description

SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS..

2SC2117 Features

* : . Output Power : Po=2.8W (Min. ) ( f=175MHz, VCC=13.5V, Pi=0.15W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCc=13.5V, P Q =4W, f=175MHz 0&39MAX. 08.5MAX, Unit in mm ^0.4 5 2 6 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitt

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SILICON NPN TRANSISTOR Toshiba
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