2SC2181
HGSemi
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Silicon npn power transistor.
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2SC2181 - SILICON NPN TRANSISTOR
(Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : . Output Power : P o =40W (Min.)
( f=175MHz, VCC =13.5V, P-j=10W.
2SC2188 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SC2188
Silicon NPN epitaxial planer type
For intermediate frequency amplification of TV image
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0..
2SC2189 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V (Min) ·Wide Area of Safe Operation ·Minimum Lot-t.
2SC2189 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
2SC2189
DESCRIPTION ·With TO-3 package ·Wide area o.
2SC2101 - Silicon NPN POWER TRANSISTOR
(Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P =6W (Min.)
( f=175MHz, VCC=12.5V, Pi=0.5W )
Un.
2SC2101 - Silicon NPN POWER TRANSISTOR
(HGSemi)
H G Semiconductors
HG RF POWER TRANSISTOR
2SC2101
ROHS Compliance,Silicon NPN POWER TRANSISTOR
Note : Above parameters , ratings , limits and condit.
2SC2102 - SILICON NPN TRANSISTOR
(Toshiba)
1
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : . Output Power : Po=15W (Min.)
( f=l 75MHz, Vcc=12.5V, Pi=1.3W).
2SC2103A - SILICON NPN TRANSISTOR
(Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : . Output Power : P =27W (Min.)
(f=175MHz, VC C=12.5V, Pi=4.2W ) 1.
2SC2104 - Silicon NPN Transistor
(Toshiba)
:
SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P G =3W(Min.)
(f=470MHz, V C c=12.6V, Pi=0.4W) ..
2SC2105 - SILICON NPN TRANSISTOR
(Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P =6W(Min.)
(f =4 70MHz, V C c=12.6V, P 1 =1W) . 1.
