2SC2290 Datasheet - HGSemi

2SC2290 Silicon NPN POWER TRANSISTOR

HG Semiconductors HG RF POWER TRANSISTOR 2SC2290 ROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W PEP (Min.) Power Gain : Gp = 11.8dB (Min.) Collector Efficiency ηC: = 35% (Min.) Intermodulation Distortion : IMD = 30dB (Max.) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector C urrent Collector Power Dissipation Junction T em per.

2SC2290-HGSemi.pdf

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Datasheet Details

Part number:

2SC2290

Manufacturer:

HGSemi

File Size:

292.07 KB

Description:

Silicon npn power transistor.

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2SC2290 2SC2290 Silicon NPN POWER TRANSISTOR HGSemi

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