2SC2188 Datasheet, Transistor, Panasonic Semiconductor

2SC2188 Features

  • Transistor q q q 1.5 R0.9 R0.9 0.85 0.55±0.1 0.45±0.05 1.25±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector

PDF File Details

Part number:

2SC2188

Manufacturer:

Panasonic Semiconductor

File Size:

38.62kb

Download:

📄 Datasheet

Description:

Silicon npn transistor.

Datasheet Preview: 2SC2188 📥 Download PDF (38.62kb)
Page 2 of 2SC2188

TAGS

2SC2188
Silicon
NPN
Transistor
Panasonic Semiconductor

📁 Related Datasheet

2SC2181 - SILICON NPN TRANSISTOR (Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P o =40W (Min.) ( f=175MHz, VCC =13.5V, P-j=10W.

2SC2181 - Silicon NPN POWER TRANSISTOR (HGSemi)
HG HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2181 Note : Above parameters , ratings , limits and cond.

2SC2189 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Wide Area of Safe Operation ·Minimum Lot-t.

2SC2189 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon NPN Power Transistors 2SC2189 DESCRIPTION ·With TO-3 package ·Wide area o.

2SC2101 - Silicon NPN POWER TRANSISTOR (Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P =6W (Min.) ( f=175MHz, VCC=12.5V, Pi=0.5W ) Un.

2SC2101 - Silicon NPN POWER TRANSISTOR (HGSemi)
H G Semiconductors HG RF POWER TRANSISTOR 2SC2101 ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and condit.

2SC2102 - SILICON NPN TRANSISTOR (Toshiba)
1 SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : Po=15W (Min.) ( f=l 75MHz, Vcc=12.5V, Pi=1.3W).

2SC2103A - SILICON NPN TRANSISTOR (Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P =27W (Min.) (f=175MHz, VC C=12.5V, Pi=4.2W ) 1.

2SC2104 - Silicon NPN Transistor (Toshiba)
: SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P G =3W(Min.) (f=470MHz, V C c=12.6V, Pi=0.4W) ..

2SC2105 - SILICON NPN TRANSISTOR (Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P =6W(Min.) (f =4 70MHz, V C c=12.6V, P 1 =1W) . 1.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts