HY3208A Datasheet - HOOYI

HY3208A N-Channel Enhancement Mode MOSFET

HY3208AP/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 80 ±25 175 55 to- 175 120 IDM Pulsed Drain Current ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to.

HY3208A Datasheet (906.72 KB)