HY3208A Datasheet, Mosfet, HOOYI

PDF File Details

Part number:

HY3208A

Manufacturer:

HOOYI

File Size:

906.72kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode mosfet.

Datasheet Preview: HY3208A 📥 Download PDF (906.72kb)
Page 2 of HY3208A Page 3 of HY3208A

TAGS

HY3208A
N-Channel
Enhancement
Mode
MOSFET
HOOYI

📁 Related Datasheet

HY3208B - N-Channel MOSFET (HOOYI)
HY3208P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/120A R= DS(ON) 7.0 mΩ (typ.) @ V =10V GS • 100% avalanche tested • Relia.

HY3208M - N-Channel MOSFET (HOOYI)
HY3208P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/120A R= DS(ON) 7.0 mΩ (typ.) @ V =10V GS • 100% avalanche tested • Relia.

HY3208P - N-Channel MOSFET (HOOYI)
HY3208P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/120A R= DS(ON) 7.0 mΩ (typ.) @ V =10V GS • 100% avalanche tested • Relia.

HY3208PM - N-Channel MOSFET (HOOYI)
HY3208P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/120A R= DS(ON) 7.0 mΩ (typ.) @ V =10V GS • 100% avalanche tested • Relia.

HY3208PS - N-Channel MOSFET (HOOYI)
HY3208P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/120A R= DS(ON) 7.0 mΩ (typ.) @ V =10V GS • 100% avalanche tested • Relia.

HY3210B - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .

HY3210B - N-Channel 100V MOSFET (VBsemi)
HY3210B-VB HY3210B-VB Datasheet N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.010 at VGS = 10 V 100 0.023 at.

HY3210M - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .

HY3210P - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .

HY3210PM - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts