HY3208A
HOOYI
906.72kb
N-channel enhancement mode mosfet.
TAGS
📁 Related Datasheet
HY3208B - N-Channel MOSFET
(HOOYI)
HY3208P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
Features
• 80V/120A
R= DS(ON)
7.0
mΩ
(typ.)
@
V =10V GS
• 100% avalanche tested
• Relia.
HY3208M - N-Channel MOSFET
(HOOYI)
HY3208P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
Features
• 80V/120A
R= DS(ON)
7.0
mΩ
(typ.)
@
V =10V GS
• 100% avalanche tested
• Relia.
HY3208P - N-Channel MOSFET
(HOOYI)
HY3208P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
Features
• 80V/120A
R= DS(ON)
7.0
mΩ
(typ.)
@
V =10V GS
• 100% avalanche tested
• Relia.
HY3208PM - N-Channel MOSFET
(HOOYI)
HY3208P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
Features
• 80V/120A
R= DS(ON)
7.0
mΩ
(typ.)
@
V =10V GS
• 100% avalanche tested
• Relia.
HY3208PS - N-Channel MOSFET
(HOOYI)
HY3208P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
Features
• 80V/120A
R= DS(ON)
7.0
mΩ
(typ.)
@
V =10V GS
• 100% avalanche tested
• Relia.
HY3210B - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3210P/M/B/PS/PM
Features
• 100V/120A
RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .
HY3210B - N-Channel 100V MOSFET
(VBsemi)
HY3210B-VB
HY3210B-VB Datasheet
N-Channel 100-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.010 at VGS = 10 V 100
0.023 at.
HY3210M - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3210P/M/B/PS/PM
Features
• 100V/120A
RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .
HY3210P - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3210P/M/B/PS/PM
Features
• 100V/120A
RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .
HY3210PM - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3210P/M/B/PS/PM
Features
• 100V/120A
RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .