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HY3208A, HY3208AP Datasheet - HOOYI

HY3208A N-Channel Enhancement Mode MOSFET

HY3208AP/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 80 ±25 175 55 to- 175 120 IDM Pulsed Drain Current ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to.

HY3208AP-HOOYI.pdf

This datasheet PDF includes multiple part numbers: HY3208A, HY3208AP. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

HY3208A, HY3208AP

Manufacturer:

HOOYI

File Size:

906.72 KB

Description:

N-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: HY3208A, HY3208AP.
Please refer to the document for exact specifications by model.

HY3208A Distributor

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HY3208A HY3208AP N-Channel Enhancement Mode MOSFET HOOYI