HY3606
HOOYI
3.78MB
N-channel mosfet. DS G TO-220FB-3L DS G TO-263-2L Applications
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📁 Related Datasheet
HY3606B - N-Channel MOSFET
(HOOYI)
HY3606P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/162A
RDS(ON) = 3.5 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le.
HY3606P - N-Channel MOSFET
(HOOYI)
HY3606P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/162A
RDS(ON) = 3.5 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le.
HY3610P - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3610P
N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 100V/160A
RDS(ON) = 4.5 mΩ (typ.) @ VGS=10V
• 100% avalanche tested
• Reliabl.
HY3003 - N-Channel MOSFET
(HOOYI)
HY3003P/B
N-Channel Enhancement Mode MOSFET
Features
• 30V/100A
RDS(ON)= 3.5mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Exce.
HY3003B - N-Channel MOSFET
(HOOYI)
HY3003P/B
N-Channel Enhancement Mode MOSFET
Features
• 30V/100A
RDS(ON)= 3.5mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Exce.
HY3003P - N-Channel MOSFET
(HOOYI)
HY3003P/B
N-Channel Enhancement Mode MOSFET
Features
• 30V/100A
RDS(ON)= 3.5mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Exce.
HY3007B - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3007P/M/B/PS/PM
Features
• 68V / 120 A
RDS(ON)=
5.0
m
(typ.)
@
V =10V GS
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green .
HY3007M - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3007P/M/B/PS/PM
Features
• 68V / 120 A
RDS(ON)=
5.0
m
(typ.)
@
V =10V GS
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green .
HY3007P - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3007P/M/B/PS/PM
Features
• 68V / 120 A
RDS(ON)=
5.0
m
(typ.)
@
V =10V GS
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green .
HY3007PM - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3007P/M/B/PS/PM
Features
• 68V / 120 A
RDS(ON)=
5.0
m
(typ.)
@
V =10V GS
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green .