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HY3610P Datasheet - HOOYI

HY3610P N-Channel Enhancement Mode MOSFET

* 100V/160A RDS(ON) = 4.5 mΩ (typ.) @ VGS=10V * 100% avalanche tested * Reliable and Rugged * Lead Free and Green Devices Available (RoHS Compliant) G D S D Applications * Switching application * Power Management for Inverter Systems. G S N-Channe.

HY3610P Datasheet (1.10 MB)

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Datasheet Details

Part number:

HY3610P

Manufacturer:

HOOYI

File Size:

1.10 MB

Description:

N-channel enhancement mode mosfet.

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HY3610P N-Channel Enhancement Mode MOSFET HOOYI

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