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HY3610P - N-Channel Enhancement Mode MOSFET

HY3610P Description

HY3610P N-Channel Enhancement Mode MOSFET .
100V/160A RDS(ON) = 4. 100% avalanche tested. Reliable and Rugged. Lead Free and Green Dev.

HY3610P Applications

* Switching application
* Power Management for Inverter Systems. G S N-Channel MOSFET Ordering and Marking Information P HY3610 YYÿ XXXJWW G Package Code P : TO220-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compou

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Datasheet Details

Part number
HY3610P
Manufacturer
HOOYI
File Size
1.10 MB
Datasheet
HY3610P-HOOYI.pdf
Description
N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET HOOYI
HOOYI HY3610P-like datasheet

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