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CS10J60A3-G

Silicon N-Channel Power MOSFET

CS10J60A3-G Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： VDSS ID PD(TC=25℃) RDS(ON)max 600 V 10 A 150 W 0.6 Ω Symbol Par

CS10J60A3-G General Description

CS10J60 A3-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher e.

CS10J60A3-G Datasheet (348.66 KB)

Preview of CS10J60A3-G PDF

Datasheet Details

Part number:

CS10J60A3-G

Manufacturer:

HUAJING MICROELECTRONICS

File Size:

348.66 KB

Description:

Silicon n-channel power mosfet.

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CS10J60A3-G Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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