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CS10J60FA9 Datasheet - HUAJING MICROELECTRONICS

Silicon N-Channel Power MOSFET

CS10J60FA9 Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： 600 V 10 A 25 W 0.6 Ω Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dta3 PD TJ，

CS10J60FA9 General Description

CS10J60F A9, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher ef.

CS10J60FA9 Datasheet (407.50 KB)

Preview of CS10J60FA9 PDF

Datasheet Details

Part number:

CS10J60FA9

Manufacturer:

HUAJING MICROELECTRONICS

File Size:

407.50 KB

Description:

Silicon n-channel power mosfet.

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CS10J60FA9 Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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