HPU650R1K3DN Datasheet - HUAJING MICROELECTRONICS

Silicon N-Channel Power MOSFET

HPU650R1K3DN Features

* l Superior switching performance l Low on resistance(Rdson≤1.3Ω) l Low gate charge (Typical Data:16.6nC) l Low reverse transfer capacitances(Typical:16.4pF) l 100% Single pulse avalanche energy test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specif

HPU650R1K3DN General Description

HPU650R1K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hi.

HPU650R1K3DN Datasheet (420.56 KB)

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Datasheet Details

Part number:

HPU650R1K3DN

Manufacturer:

HUAJING MICROELECTRONICS

File Size:

420.56 KB

Description:

Silicon n-channel power mosfet.

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HPU650R1K3DN Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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HPU650R1K3DN Features

HPU650R1K3DN General Description

Datasheet Details

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HPU650R1K3DN Distributor