HPU800R900PD-G Datasheet - CR Micro

HPU800R900PD-G Silicon N-Channel Power MOSFET

HPU800R900PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher.

HPU800R900PD-G Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free l Zener-Protected Applications： Power switch circuit of adaptor, charger and LED. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID a1 IDMa2 V

HPU800R900PD-G Datasheet (464.76 KB)