HPU800R900PD-G Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R HPU800R900PD-G General .
HPU800R900PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switc.

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Datasheet Specifications

Part number: HPU800R900PD-G
Manufacturer: CR Micro
File Size: 464.76 KB
Datasheet: HPU800R900PD-G-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor, charger and LED. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID a1 IDMa2 VGSS EAS a3 dv/dt a4 dv/dt dif/dt PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage(VGS=0V) Continuous Drain Current TC = 25 °C Pulsed Drain Current TC = 25 °C Gate-to

HPU800R900PD-G Distributors

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HPU800R900PD-G Silicon N-Channel Power MOSFET CR Micro

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