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HPU650R1K1DN Datasheet - HUAJING MICROELECTRONICS

HPU650R1K1DN - Silicon N-Channel Power MOSFET

HPU650R1K1DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and hi

HPU650R1K1DN Features

* l Superior switching performance l Low on resistance(Rdson≤1.1Ω) l Low gate charge (Typical Data:21.3nC) l Low reverse transfer capacitances(Typical:7.4pF) l 100% Single pulse avalanche energy test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specifi

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Datasheet Details

Part number:

HPU650R1K1DN

Manufacturer:

HUAJING MICROELECTRONICS

File Size:

412.29 KB

Description:

Silicon n-channel power mosfet.

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