HPU650R1K1DN

Silicon N-Channel Power MOSFET

HUAJING MICROELECTRONICS

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Datasheet Details

Part number:

HPU650R1K1DN

Manufacturer:

HUAJING MICROELECTRONICS

File Size:

412.29 KB

Description:

Silicon n-channel power mosfet.
Silicon N-Channel Power MOSFET HPU650R1K1DN ○R General Description： HPU650R1K1DN, the silicon N-c.
HPU650R1K1DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technolo.

✔ HPU650R1K1DN Features

l Superior switching performance l Low on resistance(Rdson≤1.1Ω) l Low gate charge (Typical Data:21.3nC) l Low reverse transfer capacitances(Typical:7.4pF) l 100% Single

✔ HPU650R1K1DN Application

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramet

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HPU650R1K1DN Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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✔ HPU650R1K1DN Features

✔ HPU650R1K1DN Application

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