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HPU650R900DN Datasheet - HUAJING MICROELECTRONICS

Silicon N-Channel Power MOSFET

HPU650R900DN Features

* l Superior switching performance l Low on resistance(Rdson≤0.9Ω) l Low gate charge (Typical Data:25.4nC) l Low reverse transfer capacitances(Typical:23pF) l 100% Single pulse avalanche energy test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specifie

HPU650R900DN General Description

HPU650R900DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hi.

HPU650R900DN Datasheet (409.45 KB)

Preview of HPU650R900DN PDF

Datasheet Details

Part number:

HPU650R900DN

Manufacturer:

HUAJING MICROELECTRONICS

File Size:

409.45 KB

Description:

Silicon n-channel power mosfet.

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