HPU600R800DN Datasheet - HUAJING MICROELECTRONICS

HPU600R800DN Silicon N-Channel Power MOSFET

HPU600R800DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hi.

HPU600R800DN Features

* l Superior switching performance l Low on resistance(Rdson≤0.8Ω) l Low gate charge (Typical Data:24.5nC) l Low reverse transfer capacitances(Typical:23.1pF) l 100% Single pulse avalanche energy test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specif

HPU600R800DN Datasheet (413.24 KB)