HPU600R2K3DP Datasheet - HUAJING MICROELECTRONICS

HPU600R2K3DP Silicon N-Channel Power MOSFET

HPU600R2K3DP, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hi.

HPU600R2K3DP Features

* l Superior switching performance l Low on resistance(Rdson≤2.3Ω) l Low gate charge (Typical Data:11.5nC) l Low reverse transfer capacitances(Typical:5.8pF) l 100% Single pulse avalanche energy test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specifi

HPU600R2K3DP-HUAJINGMICROELECTRONICS.pdf