HPU600R760MB Datasheet - HUAJING MICROELECTRONICS

HPU600R760MB Silicon N-Channel Power MOSFET

HPU600R760MB, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher e.

HPU600R760MB Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified）： ○R 650 V 5.5 A 85 W 0.70 Ω Symbol VDSS ID a1 IDMa2 VGSS EAS a3 dv/dt a4 PD TJ，

HPU600R760MB-HUAJINGMICROELECTRONICS.pdf