HPU600R700DN Datasheet - HUAJING MICROELECTRONICS

HPU600R700DN Silicon N-Channel Power MOSFET

HPU600R700DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hi.

HPU600R700DN Features

* l Superior switching performance l Low on resistance(Rdson≤0.7Ω) l Low gate charge (Typical Data:26nC) l Low reverse transfer capacitances(Typical:23.8pF) l 100% Single pulse avalanche energy test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specifie

HPU600R700DN Datasheet (403.33 KB)