CS10J60A3-G Silicon N-Channel Power MOSFET

HUAJING MICROELECTRONICS

CS10J60A3-G Description

Silicon N-Channel Power MOSFET CS10J60 A3-G ○R General .
CS10J60 A3-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switchi.

CS10J60A3-G Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： VDSS ID PD(TC=25℃) RDS(ON)max 600 V 10 A 150 W 0.6 Ω Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dta3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-to-Source V

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Datasheet Details

Part number: CS10J60A3-G
Manufacturer: HUAJING MICROELECTRONICS
File Size: 348.66 KB
Datasheet: CS10J60A3-G-HUAJINGMICROELECTRONICS.pdf
Description: Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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