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HGH20N120A N-Channel Enhancement Mode Field Effect Transistor

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Description

N-Channel Enhancement Insulated Gate Bipolar Transistor HGH20N120A * Applications * Induction heating and Microwave oven * Soft.
Collector to Emitter Voltage Gate to Emitter Voltage Ratings 1200 ±30 Units V V Collector Current(TC = 25℃) IC Collector Current(TC = 100℃) 40 20.

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Datasheet Specifications

Part number
HGH20N120A
Manufacturer
HUASHAN ELECTRONIC
File Size
0.98 MB
Datasheet
HGH20N120A-HUASHANELECTRONIC.pdf
Description
N-Channel Enhancement Mode Field Effect Transistor

Features

* TO-3P
* Low saturation voltage, Vce(on)(typ)=2.3V@Vge=15V
* High input impedance
* Field stop trench technology offer superior conduction and switching performances,
* High speed switching
* Absolute Maximum Ratings 1―Gate,G 2―Collector,C 3―Emitter,E Symbol VC

Applications

* Induction heating and Microwave oven
* Soft switching applications

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