HGH20N120A Datasheet (HUASHAN ELECTRONIC) - N-Channel Enhancement Mode Field Effect Transistor

HGH20N120A, N-Channel Enhancement Mode Field Effect Transistor

Collector to Emitter Voltage Gate to Emitter Voltage Ratings 1200 ±30 Units V V Collector Current（TC = 25℃） IC Collector Current（TC = 100℃） 40 20 A A ICM (1) Pulsed Collector Current 80 A IF Diode continuous Forward current （TC = 100℃） 15 A Maximum Power Dissipation（TC = PD 25℃） Maximu

HGH20N120A Features

* TO-3P

* Low saturation voltage, Vce(on)(typ)=2.3V@Vge=15V

* High input impedance

* Field stop trench technology offer superior conduction and switching performances,

* High speed switching

* Absolute Maximum Ratings 1―Gate，G 2―Collector，C 3―Emitter，E Symbol VC