HGH25N120A N-Channel Enhancement Mode Field Effect Transistor

HUASHAN ELECTRONIC

Description

N-Channel Enhancement Insulated Gate Bipolar Transistor HGH25N120A * Applications * Induction heating and Microwave oven * Soft.
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current（TC = 25℃） Collector Current（TC = 100℃） Ratings 1200 ±30 50 25 Units V V A A.

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Datasheet Specifications

Part number: HGH25N120A
Manufacturer: HUASHAN ELECTRONIC
File Size: 0.96 MB
Datasheet: HGH25N120A-HUASHANELECTRONIC.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Features

* TO-3P
* Low saturation voltage, Vce(on)(typ)=2.1V@Vge=15V
* High input impedance
* Field stop trench technology offer superior conduction and switching performances,
* High speed switching
* Absolute Maximum Ratings 1―Gate，G 2―Collector，C 3―Emitter，E Symbol VC

Applications

* Induction heating and Microwave oven
* Soft switching applications

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HGH25N120A N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC

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