Datasheet Details
- Part number
- HGH25N120A
- Manufacturer
- HUASHAN ELECTRONIC
- File Size
- 0.96 MB
- Datasheet
- HGH25N120A-HUASHANELECTRONIC.pdf
- Description
- N-Channel Enhancement Mode Field Effect Transistor
HGH25N120A Description
N-Channel Enhancement Insulated Gate Bipolar Transistor HGH25N120A * Applications * Induction heating and Microwave oven * Soft.
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current（TC = 25℃）
Collector Current（TC = 100℃）
Ratings
1200 ±30 50
25
Units
V V A
A.
HGH25N120A Features
* TO-3P
* Low saturation voltage, Vce(on)(typ)=2.1V@Vge=15V
* High input impedance
* Field stop trench technology offer superior
conduction and switching performances,
* High speed switching
* Absolute Maximum Ratings
1―Gate，G 2―Collector，C 3―Emitter，E
Symbol
VC
HGH25N120A Applications
* Induction heating and Microwave oven
* Soft switching applications
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