HGH25N120A Datasheet - HUASHAN ELECTRONIC

HGH25N120A N-Channel Enhancement Mode Field Effect Transistor

Collector to Emitter Voltage Gate to Emitter Voltage Collector Current（TC = 25℃） Collector Current（TC = 100℃） Ratings 1200 ±30 50 25 Units V V A A ICM (1) Pulsed Collector Current 80 A IF Diode continuous Forward current （TC = 100℃） 15 A Maximum Power Dissipation（TC = PD 25℃） Maximum Powe.

HGH25N120A Features

* TO-3P

* Low saturation voltage, Vce(on)(typ)=2.1V@Vge=15V

* High input impedance

* Field stop trench technology offer superior conduction and switching performances,

* High speed switching

* Absolute Maximum Ratings 1―Gate，G 2―Collector，C 3―Emitter，E Symbol VC

HGH25N120A Datasheet (0.96 MB)