HVV1011-300 Datasheet (HVVi) - Power Transistor

HVV1011-300, Power Transistor

The high power HVV1011-300 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1030MHz to 1090MHz.

The high voltage HVVFET™ technology produces over 300W of pulsed output power while offering high gain,high efficiency,and ease of matching with

HVV1011-300 Features

* Silicon MOSFET Technology

* Operation from 24V to 50V

* High Power Gain

* Extreme Ruggedness

* Internal Input and Output Matching

* Excellent Thermal Stability

* All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology i