HVV1011-300 - Power Transistor

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Datasheet Details

Part number: HVV1011-300
Manufacturer: HVVi
File Size: 771.10 KB
Datasheet: HVV1011-300-HVVi.pdf
Description: Power Transistor

HVV1011-300 Product details

Description

The high power HVV1011-300 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1030MHz to 1090MHz.

Features

Silicon MOSFET Technology.
Operation from 24V to 50V.
High Power Gain.
Extreme Ruggedness.
Internal Input and Output Matching.
Excellent Thermal Stability.
All Gold Bonding Scheme.

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