HVV1011-300 Datasheet - HVVi

HVV1011-300 Power Transistor

The high power HVV1011-300 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1030MHz to 1090MHz. The high voltage HVVFET™ technology produces over 300W of pulsed output power while offering high gain,high efficiency,and ease of matching with.

HVV1011-300 Features

* Silicon MOSFET Technology

* Operation from 24V to 50V

* High Power Gain

* Extreme Ruggedness

* Internal Input and Output Matching

* Excellent Thermal Stability

* All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology i

HVV1011-300 Datasheet (771.10 KB)

HVV1011-300 Datasheet Preview — Preview of HVV1011-300 PDF

Datasheet Details

Part number:

HVV1011-300

Manufacturer:

HVVi

File Size:

771.10 KB

Description:

Power transistor.

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HVV1011-300 Power Transistor HVVi

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