HVV1012-060, ASI
DESCRIPTION
GPAECKAGE
FEATURES ABSOLUTE MAXIMUM RATINGS
RUGGEDNESS
THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS
7525 ETHEL AVENUE NORTH HOL.
HVV1012-250, HVVi
The innovative Semiconductor Company
HVV1012-250 High Voltage, High Ruggedness
TM L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, .
HVV1011-035, ASI
DESCRIPTION
The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operati.
HVV1011-300, HVVi
The innovative Semiconductor Company
HVV1011-300 High Voltage, High Ruggedness
TM L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, .
HVV1214-025, HVVi
HHVVVV11221144--002255
The innovatHivVeVS1em21ic4o-n0HL1d22-u5VB0cHL1Pt0aVL1HL12L1-oR-n2V2--B102rV-1BBd00OB2V0a0C40a0aV1-nRD0ao01-n-n1d41-nm01a12Udd4.
HVV1214-025, ASI
>LL'('*#&(+
25 Watts, 50V, 1200-1400MHz
200 s, 10% Duty
DESCRIPTION
The high power HVV1214-025 device is a high voltage silicon enhancement mode RF .
