HVV1012-250 Datasheet (HVVi) - Power Transistor

HVV1012-250, Power Transistor

The high power HVV1012-250 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz.

The high voltage HVVFET™ technology produces over 250W of pulsed output power while offering high gain,high efficiency,and ease of matching with

HVV1012-250 Features

* Silicon MOSFET Technology

* Operation from 24V to 50V

* High Power Gain

* Extreme Ruggedness

* Internal Input and Output Matching

* Excellent Thermal Stability

* All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology i