HVV1012-250 - Power Transistor

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Datasheet Details

Part number: HVV1012-250
Manufacturer: HVVi
File Size: 629.33 KB
Datasheet: HVV1012-250-HVVi.pdf
Description: Power Transistor

HVV1012-250 Product details

Description

The high power HVV1012-250 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz.

Features

Silicon MOSFET Technology.
Operation from 24V to 50V.
High Power Gain.
Extreme Ruggedness.
Internal Input and Output Matching.
Excellent Thermal Stability.
All Gold Bonding Scheme.

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Power Transistor HVVi

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