HVV1011-035 Datasheet, Transistor, ASI

HVV1011-035 Features

• Transistor High Power Gain Excellent Ruggedness 50V Supply Voltage ABSOLUTE MAXIMUM RATINGS Symbol VDSS VGS IDSX PD2 TS TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power

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Part number:

HVV1011-035

Manufacturer:

ASI

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171.27kb

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📄 Datasheet

Description:

Rf transistor. The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications op

HVV1011-035 Application

• Applications operating at frequencies of 1030 MHz and 1090 MHz. PACKAGE FEATURES High Power Gain Excellent Ruggedness 50V Supply Voltage ABSOLUTE

TAGS

HVV1011-035

ASI

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