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HVV1011-035

RF transistor

HVV1011-035 Features

* High Power Gain Excellent Ruggedness 50V Supply Voltage ABSOLUTE MAXIMUM RATINGS Symbol VDSS VGS IDSX PD2 TS TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Storage Temperature Junction Temperature Value 95 -10, 10 2 116 -65 to +150 200 Unit V V A W °C °C T

HVV1011-035 Datasheet (171.27 KB)

Preview of HVV1011-035 PDF

Datasheet Details

Part number:

HVV1011-035

Manufacturer:

ASI

File Size:

171.27 KB

Description:

Rf transistor.

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HVV1011-035 transistor ASI

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